Semicoherent growth of single-crystal β-In2S3 layers on InP(111) and InAs(111)

Published: 5/09/2019
Semicoherent growth of single-crystal β-In2S3 layers on InP(111) and InAs(111)
Source: FEEDS.RSC.ORG

CrystEngComm , 2019, Accepted Manuscript DOI : 10.1039/C9CE01135H, Paper Y. Takagaki, Bernd Jenichen, O. Brandt Single-crystal layer growth is essential for heterostructure electronic devices. Material combinations that realize novel functionalities within the constraint of the growth are therefore permanently in search. We show that two... The content of this RSS Feed (c) The Royal Society of Che

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