Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS 2 monolayer

Published: 12/01/2019
Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS 2 monolayer
Source: LINK.SPRINGER.COM

Abstract Doping, which is the intentional introduction of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we present high-quality two-dimensional SnS 2 nanosheets with well-controlled Sb doping concentration via direct vapor growth approach and following micromechanical cleavage process. X-ray photoelectron spectroscopy (XPS) meas

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