Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well

Published: 12/01/2019
Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well
Source: FEEDS.RSC.ORG

Nanoscale , 2019, Advance Article DOI : 10.1039/C8NR07489E, Paper Open Access   This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Eric Ashalley, Karol Gryczynski, Zhiming Wang, Gregory Salamo, Arup Neogi Plasmonic and electrostatic interaction among the Au and Ga nanoparticles results in frequency modulation and longer lifetime of emitted light.

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