Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity

Published: 12/01/2019
Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity
Source: FEEDS.RSC.ORG

CrystEngComm , 2019, Advance Article DOI : 10.1039/C8CE01794H, Communication Lin Qi, Benzhe Sun, Weizhen Wang, Jian Zhang, Huazhe Yang, Yang Qi The influence of oxygen vacancy mediation on the microstructure of post-annealed non-polar ZnO films has been investigated. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Roya

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