A Flexible Memory with Low-Voltage and High-Operation Speed Using an Al2O3/Poly(α-methylstyrene) Gate Stack on Muscovite Substrate

Published: 12/01/2019
A Flexible Memory with Low-Voltage and High-Operation Speed Using an Al2O3/Poly(α-methylstyrene) Gate Stack on Muscovite Substrate
Source: PUBS.RSC.ORG

J. Mater. Chem. C , 2019, Accepted Manuscript DOI : 10.1039/C8TC05932B, Paper Huixin He, Waner He, Jiaying Mai, Jiali Wang, Zhengmiao Zou, Dao Wang, Jiajun Feng, Aihua Zhang, Zhen Fan, Sujuan Wu, Min Zeng, Jinwei Gao, Guofu Zhou, Xubing Lu, Junming Liu Flexible organic field effect transistors (OFETs) are a promising class of flexible nonvolatile memories. However, fabrication of flexible OFET dev

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